FQT1N80TF_ws n-channel mosfet ?2011fairchildsemiconductorcorporation FQT1N80TF_wsrev.c0 www.fairchildsemi.com 1 qfet ? august2011 FQT1N80TF_ws n-channel mosfet 800v, 0.2a, 20 features ? r ds(on) =15.5 (typ.)@v gs =10v,i d =0.1a ? lowgatecharge(typ.5.5nc) ? lowc rss (typ.2.7pf) ? fastswitching ? 100%avalanchetested ? improveddv/dtcapability ? rohscompliant description these nchannel enhancement mode power field effect transistors are produced using fairchilds proprieta ry, planar stripe,dmostechnology. this advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance,andwithstandhighenergypulseinthea valanche andcommutation mode. these devices are wellsuited fo r high efficientswitchedmodepowersuppliesandactivepowerf actor correction. d g s sot-223 fqt series g d s mosfet maximum ratings t c =25 o cunlessotherwisenoted* thermal characteristics symbol parameter FQT1N80TF_ws units v dss draintosourcevoltage 800 v v gss gatetosourcevoltage 30 v i d draincurrent continuous(t c =25 o c) 0.2 a continuous(t c =100 o c) 0.12 i dm draincurrent pulsed (note1) 0.8 a e as singlepulsedavalancheenergy (note2) 90 m j i ar avalanchecurrent (note1) 0.2 a e ar repetitiveavalancheenergy (note1 ) 0.2 mj dv/dt peakdioderecoverydv/dt (note 3) 4.0 v/ns p d powerdissipation (t c =25 o c) 2.1 w derateabove25 o c 0.02 w/ o c t j ,t stg operatingandstoragetemperaturerange 55to+150 o c t l maximumleadtemperatureforsolderingpurpose, 1/8fromcasefor5seconds 300 o c symbol parameter min. max. units r ja thermalresistance,junctiontoambient* 60 o c/w *whenmountedontheminimumpadsizerecommended(p cbmount)
FQT1N80TF_ws n-channel mosfet FQT1N80TF_wsrev.c0 www.fairchildsemi.com 2 package marking and ordering information t c =25 o cunlessotherwisenoted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics device marking device package reel size tape width quant ity fqt1n80 FQT1N80TF_ws sot223 330mm 12mm 4000 symbol parameter test conditions min. typ. max. units bv dss draintosourcebreakdownvoltage i d =250 a,v gs =0v,t j =25 o c 800 v bv dss / t j breakdownvoltagetemperature coefficient i d =250 a,referencedto25 o c 0.8 v/ o c i dss zerogatevoltagedraincurrent v ds =800v,v gs =0v 25 a v ds =640v,t c =125 o c 250 i gss gatetobodyleakagecurrent v gs =30v,v ds =0v 100 na v gs(th) gatethresholdvoltage v gs =v ds ,i d =250 a 3.0 5.0 v r ds(on) staticdraintosourceonresistance v gs =10v,i d =0.1a 15.5 20 g fs forwardtransconductance v ds =40v,i d =0.1a (note4) 0.75 s c iss inputcapacitance v ds =25v,v gs =0v f=1mhz 150 195 pf c oss outputcapacitance 20 30 pf c rss reversetransfercapacitance 2.7 5.0 pf q g totalgatechargeat10v v ds =640v,i d =1a v gs =10v (note4,5) 5.5 7.2 nc q gs gatetosourcegatecharge 1.1 nc q gd gatetodrainmillercharge 3.3 nc t d(on) turnondelaytime v dd =400v,i d =1a r g =25 (note4,5) 10 30 ns t r turnonrisetime 25 60 ns t d(off) turnoffdelaytime 15 40 ns t f turnofffalltime 25 60 ns i s maximumcontinuousdraintosourcediodeforwardcurr ent 0.2 a i sm maximumpulseddraintosourcediodeforwardcurrent 0.8 a v sd draintosourcediodeforwardvoltage v gs =0v,i sd =0.2a 1.4 v t rr reverserecoverytime v gs =0v,i sd =1a di f /dt=100a/ s (note4) 300 ns q rr reverserecoverycharge 0.6 c notes: 1.repetitiverating:pulsewidthlimitedbymaximumju nctiontemperature 2.l=170mh,i as =1a,v dd =50v,r g =25 ,startingt j =25 c 3.i sd 1a,di/dt 200a/ s,v dd bv dss ,startingt j =25 c 4.pulsetest:pulsewidth 300 s,dutycycle 2% 5.essentiallyindependentofoperatingtemperaturetyp icalcharacteristics
FQT1N80TF_ws n-channel mosfet FQT1N80TF_wsrev.c0 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transf er characteristics figure 3. on-resistance variation vs. figure 4. bod y diode forward voltage drain current and gate voltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 10 1 10 0 10 1 10 2 10 1 10 0 v gs top:15.0v 10.0v 8.0v 7.0v 6.5v 6.0v bottom:5.5v notes: 1.250spulsetest 2.t c =25 i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 2 4 6 8 10 10 1 10 0 150 o c 25 o c 55 o c notes: 1.v ds =50v 2.250spulsetest i d ,draincurrent[a] v gs ,gatesourcevoltage[v] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 20 30 40 50 v gs =20v v gs =10v note:t j =25 r ds(on) [ ], drainsourceonresistance i d ,draincurrent[a] 0.2 0.4 0.6 0.8 1.0 1.2 10 1 10 0 150 notes: 1.v gs =0v 2.250spulsetest 25 i dr ,reversedraincurrent[a] v sd ,sourcedrainvoltage[v] 10 1 10 0 10 1 0 50 100 150 200 250 c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd notes: 1.v gs =0v 2.f=1mhz c rss c oss c iss capacitance[pf] v ds ,drainsourcevoltage[v] 0 1 2 3 4 5 6 0 2 4 6 8 10 12 v ds =400v v ds =160v v ds =640v note:i d =1.0a v gs ,gatesourcevoltage[v] q g ,totalgatecharge[nc]
FQT1N80TF_ws n-channel mosfet FQT1N80TF_wsrev.c0 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature fi gure 11. transient thermal response curve 100 50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes: 1.v gs =0v 2.i d =250a bv dss ,(normalized) drainsourcebreakdownvoltage t j ,junctiontemperature[ o c] 100 50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes: 1.v gs =10v 2.i d =0.1a r ds(on) ,(normalized) drainsourceonresistance t j ,junctiontemperature[ o c] 25 50 75 100 125 150 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 i d ,draincurrent[a] t c ,casetemperature[ c] 10 0 10 1 10 2 10 3 10 3 10 2 10 1 10 0 100ms 1ms 1s dc 10ms 100 s operationinthisarea islimitedbyr ds(on) notes: 1.t c =25 o c 2.t j =150 o c 3.singlepulse i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 1 0 5 1 0 4 1 0 3 1 0 2 1 0 1 1 0 0 1 0 1 1 0 2 1 0 3 1 0 1 1 0 0 1 0 1 1 0 2 n o te s : 1 .z j c ( t) = 6 0 /w m a x . 2 .d u ty f a c to r ,d = t 1 /t 2 3 .t j m t c = p d m * z j c ( t) s in g le p u ls e d = 0 . 5 0 . 0 2 0 .2 0 .0 5 0 .1 0 .0 1 z jc (t),thermalresponse t 1 , s q u a r e w a v e p u ls e d u r a tio n [ s e c ] t 1 p dm t 2
FQT1N80TF_ws n-channel mosfet FQT1N80TF_wsrev.c0 www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & wavef orms
FQT1N80TF_ws n-channel mosfet FQT1N80TF_wsrev.c0 www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g sametype asdut v gs ? dv/dt controlledbyr g ? i sd controlledbypulseperiod v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd bodydiode forwardvoltagedrop v sd i fm ,bodydiodeforwardcurrent bodydiodereversecurrent i rm bodydioderecovery dv/dt di/dt d= gatepulsewidth gatepulseperiod dut v ds + _ driver r g sametype asdut v gs ? dv/dt controlledbyr g ? i sd controlledbypulseperiod v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd bodydiode forwardvoltagedrop v sd i fm ,bodydiodeforwardcurrent bodydiodereversecurrent i rm bodydioderecovery dv/dt di/dt d= gatepulsewidth gatepulseperiod d= gatepulsewidth gatepulseperiod
FQT1N80TF_ws n-channel mosfet FQT1N80TF_wsrev.c0 www.fairchildsemi.com 7 mechanical dimensions 3.00 0.10 7.00 0.30 0.65 0.20 0.08max 3.50 0.20 1.60 0.20 (0.46)(0.89) (0.60) (0.60) 1.75 0.20 0.70 0.10 4.60 0.25 6.50 0.20 (0.95) (0.95) 2.30 typ 0.25 max1.80 0 ~10
+0.10
C0.05 0.06 +0.04
C0.02 sot223
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